Sunday, February 20, 2011

Samsung Develops Mobile DRAM with Wide I/O Interface

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced the newest development of 1 gigabit (GB) mobile DRAM with a wide I/O interface, using 50 nanometer class process technologies. The new wide I/O mobile DRAM will be used in mobile applications, such as smart phones and tablet PCs. “Following the development of 4GB LPDDR2 DRAM (low-power DDR2 dynamic random access memory) last year, our new mobile DRAM solution with a wide I/O interface represents a significant contribution to the advancement of high-performance mobile products," said Byungse .

So, senior vice president, memory product planning & application engineering at Samsung Electronics. “We will continue to aggressively expand our high-performance mobile memory product line to further propel the growth of the mobile industry." The new 1Gb wide I/O mobile DRAM can transmit data at 12.8 gigabyte (GB) per second, which increases the bandwidth of mobile DDR DRAM (1.6GB/s) eightfold, while reducing power consumption by approximately 87 percent.

The bandwidth is also four times that of LPDDR2 DRAM. To boost data transmission, Samsung’s wide I/O DRAM uses 512 pins for data input and output compared to the previous generation of mobile DRAMs, which used a maximum of 32 pins. If you include the pins that are involved in sending commands and regulating power supply, a single Samsung wide I/O DRAM is designed to accommodate approximately 1,200 pins. 

Thanks for this Article:


Post a Comment